The problem of a near surface quasi-gas transition layer in MBEHERMAN, M. A.Crystal research and technology (1979). 1986, Vol 21, Num 11, pp 1413-1420, issn 0232-1300Article

Hg_1-xCd_xTe-Hg_1-yCd_yTe(0≤x,y≤1) heterostructures: properties epitaxy, and applicationsHERMAN, M. A; PESSA, M.Journal of applied physics. 1985, Vol 57, Num 8, pp 2671-2694, issn 0021-8979, 1Article

Ultrahigh vacuum atomic layer epitaxy of ternary II-VI semiconductor compoundsHERMAN, M. A; SADOWSKI, J. T.Crystal research and technology (1979). 1999, Vol 34, Num 2, pp 153-162, issn 0232-1300Conference Paper

Physical principles of ultrahigh vacuum atomic layer epitaxyHERMAN, M. A.Applied surface science. 1997, Vol 112, pp 1-11, issn 0169-4332Conference Paper

Approaches to understanding MBE growth phenomenaHERMAN, M. A.Thin solid films. 1995, Vol 267, Num 1-2, pp 1-14, issn 0040-6090Conference Paper

Coping with parental negativity: links with parental warmth and child adjustmentHERMAN, M. A; MCHALE, S. M.Journal of applied developmental psychology. 1993, Vol 14, Num 1, pp 121-136, issn 0193-3973Article

Delta-doped GaAs grown by chloride CVDIMAIZUMI, T; SEIWA, M; ODA, O et al.Journal of crystal growth. 1991, Vol 115, Num 1-4, pp 443-447, issn 0022-0248Conference Paper

Doping of GaN with Si and properties of blue m/i/n/n⁺ GaN LED with Si-doped n⁺-layer by MOVPEKOIDE, N; KATO, H; SASSA, M et al.Journal of crystal growth. 1991, Vol 115, Num 1-4, pp 639-642, issn 0022-0248Conference Paper

Effect of enhanced reactivity in plasma-assisted epitaxial growth of ZnSeYAMAUCHI, S; HARIU, T; ONO, S et al.Journal of crystal growth. 1991, Vol 115, Num 1-4, pp 660-663, issn 0022-0248Conference Paper

Effective Si planar doping of GaAs by MOVPE using tertiarybutylarsineKIKKAWA, T; OHORI, T; TANAKA, H et al.Journal of crystal growth. 1991, Vol 115, Num 1-4, pp 448-454, issn 0022-0248Conference Paper

Epitaxial growth of CuO thin films by in situ oxidation of Cu thin filmsKITA, R; HASE, T; SASAKI, M et al.Journal of crystal growth. 1991, Vol 115, Num 1-4, pp 752-757, issn 0022-0248Conference Paper

Extremely high be doping of InGaAs by low-temperature atomic layer epitaxyOHTSUKA, N; KODAMA, K; OZEKI, M et al.Journal of crystal growth. 1991, Vol 115, Num 1-4, pp 460-463, issn 0022-0248Conference Paper

Formation of InAs microstructures on variously oriented GaAs substratesLEE, J; KUDO, K; KUNIYOSHI, S et al.Journal of crystal growth. 1991, Vol 115, Num 1-4, pp 164-168, issn 0022-0248Conference Paper

Growth mechanism of 3C-SiC layers at a low temperature region in low-pressure CVDHATTORI, Y; SUZUKI, T; MURATA, T et al.Journal of crystal growth. 1991, Vol 115, Num 1-4, pp 607-611, issn 0022-0248Conference Paper

Growth of II-VI semiconductor quantum well structures under in situ RHEED observationsYI-HONG WU; ICHINO, K; KAWAKAMI, Y et al.Journal of crystal growth. 1991, Vol 115, Num 1-4, pp 664-669, issn 0022-0248Conference Paper

Growth of InGaP epitaxial layers by liquid phase electro-epitaxyYANAGASE, M; TANAKA, S; HIRAMATSU, K et al.Journal of crystal growth. 1991, Vol 115, Num 1-4, pp 304-308, issn 0022-0248Conference Paper

Growth of Si-doped Al_xGa_1-xN on (0001) sapphire substrate by metalorganic vapor phase epitaxyMURAKAMI, H; ASAHI, T; AMANO, H et al.Journal of crystal growth. 1991, Vol 115, Num 1-4, pp 648-651, issn 0022-0248Conference Paper

Growth of small particles of iron-cobalt alloys prepared by gas-evaporation techniqueOHNO, T.Journal of crystal growth. 1991, Vol 115, Num 1-4, pp 602-606, issn 0022-0248Conference Paper

High electron mobility pseudomorphic In_0.52Al_0.48As/In_0.8Ga_0.2As heterostructure on InP grown by flux-stabilized MBESUGIYAMA, Y; TAKEUCHI, Y; TACANO, M et al.Journal of crystal growth. 1991, Vol 115, Num 1-4, pp 509-514, issn 0022-0248Conference Paper

Homo-epitaxial growth of CdTe by sublimation under low pressureYOSHIOKA, Y; YODA, H; KASUGA, M et al.Journal of crystal growth. 1991, Vol 115, Num 1-4, pp 705-710, issn 0022-0248Conference Paper

In-situ optical monitoring of pyrolysis process on substrate surface in GaAs MOCVDKOBAYASHI, N; YAMAUCHI, Y; HORIKOSHI, Y et al.Journal of crystal growth. 1991, Vol 115, Num 1-4, pp 353-358, issn 0022-0248Conference Paper

Interdiffusion process in InGaAs/InP quantum well structuresMUKAI, K; SUGAWARA, M; YAMAZAKI, S et al.Journal of crystal growth. 1991, Vol 115, Num 1-4, pp 433-438, issn 0022-0248Conference Paper

Kinetic and interface studies for MOCVD CdTe and HgCdTe epilayers grown on GaAs substratesPENG RUI-WU; XU FEI; DING YONG-QING et al.Journal of crystal growth. 1991, Vol 115, Num 1-4, pp 698-704, issn 0022-0248Conference Paper

Large difference in the decomposition rate of metalorganics between on As- and Ga-saturated GaAs (111)B surfacesOHKI, Y; HIRATANI, Y; SASAKI, M et al.Journal of crystal growth. 1991, Vol 115, Num 1-4, pp 226-230, issn 0022-0248Conference Paper

MOMBE growth of P-based III-V semiconductors and its photo-enhancement at low temperaturesYOSHIMOTO, M; IZASA, K; TSUJI, T et al.Journal of crystal growth. 1991, Vol 115, Num 1-4, pp 265-268, issn 0022-0248Conference Paper